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SiC single crystal wafer

Product No.：pmp15
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SiC single Crystal Wafer

Major capability parameter
Growth method	MOCVD
Crystal Structure	M6
Unit cell constant	a=3.08 Å c=15.08 Å
Sequence	ABCACB
Direction	<0001> 3.5 º
With clearance	2.93 eV
Hardness	9.2（mohs）
Heat travels @300K	5 W/ cm.k
Dielectric constants	e(11)=e(22)=9.66 e(33)=10.33
Size	10x3，10x5，10x10，15x15，，20x15，20x20，
Size	dia2” x 0.33mm dia2” x 0.43mm 15 x 15 mm
Thickness	0.5mm，1.0mm
Polishing	Single or double
Crystal orientation	<001>±0.5º
redirection precision	±0.5°
Redirection the edge:	2°（special in 1°）
Angle of crystalline	Special size and orientation are available upon request
Ra:	≤5Å（5µm×5µm）
Pack	100 clean bag，1000 exactly clean bag

We can offer both 4H /6H: N type SIC wafer,SI-SIC wafer and SIC wafer Gem grade.

Special order is workable! Plz mail to i[email protected] for details!

Contact:Jason Wang Mobile:+86-18039202132