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  • GaAs infrared material
GaAs infrared material

GaAs infrared material

  • GaAs Infrared material
     GaAs infrared material has good chemistry stability, high hardness and has strong resistance to bad environment. It has good transmission in the range of 2µm-14µm wavelength. It could be widely used in the fields of thermal infrared imaging system, high power CO2 laser optical system and FLIR systems. GaAs provides an alternative to ZnSe in medium and high-power CW CO2 laser systems for lenses and rear mirrors. GaAs is particularly useful in applications where toughness and durability are important.  

    Parameters of GaAs infrared material

    Growth method
    HB or VGF
    Purity
    ≧6N
    Density
    5.37 g/cm3
    Dopant
    Cr
    Type
    P
    Resistivity (Ω·cm)
    > 10 E7
    Transmission
    ~55% (1.5- 14 um wavelength)
    Volume absorption coefficient 
    @ 10.6µm
    ≦ 0.01 /cm
    Refractive index temperature coefficient @ 10.6µm
    149 × 10-6/°C
    Thermal conductivity @ 20° C
    0.48 W/cm/°C
    Specific heat
    0.325 J/g/°C
    linear expansion coefficient @ 20° C
    5.7 × 10-6 /°C
    Young's modulus
    83 GPa (12.04 × 106 psi)
    Fracture toughness
    138 MPa (20,000 psi)
    Knoop hardness
    750 kg/mm2
    Poisson ratio
    0.31
     Dependence of refractive index to wavelength (20℃)
    Wavelength (nm)
    Refractive index (n)
    Wavelength (nm)
    Refractive index (n)
    4000
    3.31
    14500
    2.82
    8000
    3.34
    15000
    2.73
    10000
    3.13
    17000
    2.59
    11000
    3.04
    19000
    2.41
    13000
    2.97
    21900
    2.12
    13700
    2.89
     
     
    Special order is workable!  Plz mail to [email protected] for details! 
                        Contact:Jason Wang                    Mobile:+86-18039202132
                      
       

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