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  • GaAs monocrystalline wafer
GaAs monocrystalline wafer

GaAs monocrystalline wafer

GaAs monocrystalline 

Dopant
Si
Zn
Si
Diameter
50.8±0.4
50.8±0.4
63.5±0.4
Growth method
VGF
VGF
VGF
Conduct Type
N
P
N
Orientation
<511>,<100>
upon request
<100>
upon request
<100>
upon request
CC (/cm3)
4.0E17 / 2.5E18
1.5E19 / 3.0E19
1.0E17 / 7.0E17
Mobility (cm2/v.s)
>2000
>2000
>2000
EPD (/cm2)
<3000
<5000
<8000
Primary Flat
EJ (0-1-1)±0.5°
EJ (0-1-1)±0.5°
EJ (0-1-1)±0.5°
PFlat Length (mm)
17±1
17±1
17±1
Secondary Flat
EJ(0-11)±0.5°
EJ(0-11)±0.5°
EJ(0-11)±0.5°
SFlat Length (mm)
7±1
7±1
7±1
Thickness (um)
295±5
upon request
295±5
upon request
295±5
upon request
Surface Front
polished
polished
polished
Finish Back
sliced & etched
sliced & etched
sliced & etched
Epi-Ready
Yes
Yes
Yes

We can provide GaAs monocrystalline with different types and resistivity to meet your demands!

Special order is workable! Plz mail to [email protected] for details!
  Contact:Jason Wang                  Mobile:+86-18039202132
 

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